TK35N65W,S1F Pagpepresyo (USD) [13079pcs Stock]
- 1 pcs$3.46831
- 30 pcs$2.84222
- 120 pcs$2.56491
- 510 pcs$2.14898
- 1,020 pcs$1.87170
- Bilang ng Bahagi:
- TK35N65W,S1F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 35A TO-247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Transistor - IGBTs - Mga Module, Transistors - IGBTs - Single and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK35N65W,S1F electronic components. TK35N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK35N65W,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK35N65W,S1F Mga katangian ng produkto
Bilang ng Bahagi :
TK35N65W,S1F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 650V 35A TO-247
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
35A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
80 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 300V
Tampok ng FET :
-
Power Dissipation (Max) :
270W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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