Vishay Semiconductor Diodes Division - BAV19W-HE3-18

KEY Part #: K6440052

BAV19W-HE3-18 Pagpepresyo (USD) [2489257pcs Stock]

  • 1 pcs$0.01568
  • 10,000 pcs$0.01560

Bilang ng Bahagi:
BAV19W-HE3-18
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 250MA SOD123. Diodes - General Purpose, Power, Switching 120V 625mA 1A IFSM
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - Mga Rectifier ng Bridge, Diode - RF, Mga Transistor - JFET, Diode - Rectifiers - Arrays, Thyristors - Mga SCR, Transistors - IGBTs - Single and Transistor - Bipolar (BJT) - Single ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BAV19W-HE3-18 electronic components. BAV19W-HE3-18 can be shipped within 24 hours after order. If you have any demands for BAV19W-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAV19W-HE3-18 Mga katangian ng produkto

Bilang ng Bahagi : BAV19W-HE3-18
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 250MA SOD123
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 250mA (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.25V @ 200mA
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 100nA @ 100V
Capacitance @ Vr, F : 1.5pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOD-123
Package ng Tagabigay ng Device : SOD-123
Operating temperatura - Junction : 150°C (Max)

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