ES3DHE3J_A/I Pagpepresyo (USD) [371115pcs Stock]
- 1 pcs$0.10142
- 7,000 pcs$0.10091
- Bilang ng Bahagi:
- ES3DHE3J_A/I
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 200V 3A DO214AB. Rectifiers 3A, 200V, 20NS, UF RECT, SMD
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Diode - Zener - Single, Diode - Rectifiers - Single, Transistor - IGBTs - Arrays, Diode - RF and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division ES3DHE3J_A/I electronic components. ES3DHE3J_A/I can be shipped within 24 hours after order. If you have any demands for ES3DHE3J_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES3DHE3J_A/I Mga katangian ng produkto
Bilang ng Bahagi :
ES3DHE3J_A/I
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 200V 3A DO214AB
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
200V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
900mV @ 3A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 200V
Capacitance @ Vr, F :
45pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214AB, SMC
Package ng Tagabigay ng Device :
DO-214AB (SMC)
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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DIODE GEN PURP 150V 2A DO214AA. Rectifiers 2A,150V,25ns, SMB Planar FER RECT, SMD
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