ES2DHE3_A/I Pagpepresyo (USD) [445255pcs Stock]
- 1 pcs$0.08307
- 6,400 pcs$0.07105
- Bilang ng Bahagi:
- ES2DHE3_A/I
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,20ns SMB, UF Rect, SMD
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Mga Transistor - FET, MOSFET - RF, Transistors - IGBTs - Single, Mga Transistor - JFET and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division ES2DHE3_A/I electronic components. ES2DHE3_A/I can be shipped within 24 hours after order. If you have any demands for ES2DHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES2DHE3_A/I Mga katangian ng produkto
Bilang ng Bahagi :
ES2DHE3_A/I
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 200V 2A DO214AA
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
200V
Kasalukuyang - Average na Rectified (Io) :
2A
Boltahe - Ipasa (Vf) (Max) @ Kung :
900mV @ 2A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
20ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 200V
Capacitance @ Vr, F :
18pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214AA, SMB
Package ng Tagabigay ng Device :
DO-214AA (SMB)
Operating temperatura - Junction :
-55°C ~ 150°C
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