[6282pcs Stock]
- Bilang ng Bahagi:
- HN3C51F-GR(TE85L,F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS 2NPN 120V 0.1A SM6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - RF, Thyristors - Mga TRIAC, Transistor - Programmable Unijunction and Mga Transistor - Bipolar (BJT) - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN3C51F-GR(TE85L,F electronic components. HN3C51F-GR(TE85L,F can be shipped within 24 hours after order. If you have any demands for HN3C51F-GR(TE85L,F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN3C51F-GR(TE85L,F Mga katangian ng produkto
Bilang ng Bahagi :
HN3C51F-GR(TE85L,F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS 2NPN 120V 0.1A SM6
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
2 NPN (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
120V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Kapangyarihan - Max :
300mW
Dalas - Paglilipat :
100MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SC-74, SOT-457
Package ng Tagabigay ng Device :
SM6
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