ESH3B M6G Pagpepresyo (USD) [838004pcs Stock]
- 1 pcs$0.04414
- Bilang ng Bahagi:
- ESH3B M6G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 100V 3A DO214AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - Mga TRIAC and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation ESH3B M6G electronic components. ESH3B M6G can be shipped within 24 hours after order. If you have any demands for ESH3B M6G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH3B M6G Mga katangian ng produkto
Bilang ng Bahagi :
ESH3B M6G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 100V 3A DO214AB
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
100V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
900mV @ 3A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
20ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 100V
Capacitance @ Vr, F :
45pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214AB, SMC
Package ng Tagabigay ng Device :
DO-214AB (SMC)
Operating temperatura - Junction :
-55°C ~ 175°C
Pinakabagong Balita
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