Diodes Incorporated - DDTB114TC-7-F

KEY Part #: K6526451

DDTB114TC-7-F Pagpepresyo (USD) [1903162pcs Stock]

  • 1 pcs$0.01943
  • 3,000 pcs$0.01801

Bilang ng Bahagi:
DDTB114TC-7-F
Tagagawa:
Diodes Incorporated
Detalyadong Paglalarawan:
TRANS PREBIAS PNP 200MW SOT23-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay and Diode - Zener - Single ...
Kumpetensyang Pakinabang:
We specialize in Diodes Incorporated DDTB114TC-7-F electronic components. DDTB114TC-7-F can be shipped within 24 hours after order. If you have any demands for DDTB114TC-7-F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DDTB114TC-7-F Mga katangian ng produkto

Bilang ng Bahagi : DDTB114TC-7-F
Tagagawa : Diodes Incorporated
Paglalarawan : TRANS PREBIAS PNP 200MW SOT23-3
Serye : -
Katayuan ng Bahagi : Active
Uri ng Transistor : PNP - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) : 500mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Kasalukuyang - Collector Cutoff (Max) : 500nA (ICBO)
Dalas - Paglilipat : 200MHz
Kapangyarihan - Max : 200mW
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device : SOT-23-3

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