Vishay Semiconductor Diodes Division - UH1B-E3/5AT

KEY Part #: K6446736

UH1B-E3/5AT Pagpepresyo (USD) [1664pcs Stock]

  • 7,500 pcs$0.04049

Bilang ng Bahagi:
UH1B-E3/5AT
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 1A DO214AC.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - Bipolar (BJT) - RF, Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Diode - Rectifiers - Single, Thyristors - Mga SCR and Transistor - Mga FET, MOSFET - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division UH1B-E3/5AT electronic components. UH1B-E3/5AT can be shipped within 24 hours after order. If you have any demands for UH1B-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

UH1B-E3/5AT Mga katangian ng produkto

Bilang ng Bahagi : UH1B-E3/5AT
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 1A DO214AC
Serye : -
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.05V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 30ns
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 100V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 175°C

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