IAUT260N10S5N019ATMA1 Pagpepresyo (USD) [32560pcs Stock]
- 1 pcs$1.26576
- Bilang ng Bahagi:
- IAUT260N10S5N019ATMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET75V120V.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Thyristors - Mga TRIAC, Diode - RF, Transistors - IGBTs - Single and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IAUT260N10S5N019ATMA1 electronic components. IAUT260N10S5N019ATMA1 can be shipped within 24 hours after order. If you have any demands for IAUT260N10S5N019ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IAUT260N10S5N019ATMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IAUT260N10S5N019ATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET75V120V
Serye :
OptiMOS™-5
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
260A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.9 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 210µA
Gate Charge (Qg) (Max) @ Vgs :
166nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
11830pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
300W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-HSOF-8-1
Pakete / Kaso :
8-PowerSFN
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