ON Semiconductor - NHPM120T3G

KEY Part #: K6426789

NHPM120T3G Pagpepresyo (USD) [1022091pcs Stock]

  • 1 pcs$0.03619
  • 12,000 pcs$0.02702

Bilang ng Bahagi:
NHPM120T3G
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 1A POWERMITE. Rectifiers PUF1A 200V IN PWRMIT
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Thyristors - Mga SCR, Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor NHPM120T3G electronic components. NHPM120T3G can be shipped within 24 hours after order. If you have any demands for NHPM120T3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NHPM120T3G Mga katangian ng produkto

Bilang ng Bahagi : NHPM120T3G
Tagagawa : ON Semiconductor
Paglalarawan : DIODE GEN PURP 200V 1A POWERMITE
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-216AA
Package ng Tagabigay ng Device : Powermite
Operating temperatura - Junction : -65°C ~ 175°C

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