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Kung ang iyong lokasyon ay hindi nakalista, mangyaring pumili ng isa sa mga sumusunod:

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  1. Bahay
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  5. BSR58LT1G

ON Semiconductor - BSR58LT1G

KEY Part #: K6521644

[4764pcs Stock]

    Bilang ng Bahagi:
    BSR58LT1G
    Tagagawa:
    ON Semiconductor
    Detalyadong Paglalarawan:
    JFET N-CH 40V 350MW SOT23.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - RF, Transistor - IGBTs - Arrays, Diode - Zener - Single, Thyristors - Mga SCR, Mga Transistor - JFET, Transistors - IGBTs - Single and Thyristors - DIACs, SIDACs ...
    Kumpetensyang Pakinabang:
    We specialize in ON Semiconductor BSR58LT1G electronic components. BSR58LT1G can be shipped within 24 hours after order. If you have any demands for BSR58LT1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    BSR58LT1G Mga katangian ng produkto

    Bilang ng Bahagi : BSR58LT1G
    Tagagawa : ON Semiconductor
    Paglalarawan : JFET N-CH 40V 350MW SOT23
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng FET : N-Channel
    Boltahe - Breakdown (V (BR) GSS) : 40V
    Drain sa Source Voltage (Vdss) : -
    Kasalukuyang - Drain (Idss) @ Vds (Vgs = 0) : 8mA @ 15V
    Kasalukuyang Drain (Id) - Max : -
    Boltahe - Cutoff (VGS off) @ Id : 800mV @ 1µA
    Input Capacitance (Ciss) (Max) @ Vds : -
    Paglaban - RDS (On) : 60 Ohms
    Kapangyarihan - Max : 350mW
    Temperatura ng pagpapatakbo : -65°C ~ 150°C (TJ)
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
    Package ng Tagabigay ng Device : SOT-23-3 (TO-236)

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