Vishay Semiconductor Diodes Division - BAS21-G3-18

KEY Part #: K6458561

BAS21-G3-18 Pagpepresyo (USD) [2472149pcs Stock]

  • 1 pcs$0.01496
  • 10,000 pcs$0.01384

Bilang ng Bahagi:
BAS21-G3-18
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 200MA SOT23. Diodes - General Purpose, Power, Switching 250 Volt 200mA 50ns 2.5A IFSM
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BAS21-G3-18 electronic components. BAS21-G3-18 can be shipped within 24 hours after order. If you have any demands for BAS21-G3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS21-G3-18 Mga katangian ng produkto

Bilang ng Bahagi : BAS21-G3-18
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 200V 200MA SOT23
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 200mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.25V @ 200mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 100nA @ 200V
Capacitance @ Vr, F : 5pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device : SOT-23
Operating temperatura - Junction : -55°C ~ 150°C

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