MBR1090HC0G Pagpepresyo (USD) [300633pcs Stock]
- 1 pcs$0.12303
- Bilang ng Bahagi:
- MBR1090HC0G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 90V 10A TO220AC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Transistor - Mga FET, MOSFET - Arrays, Diode - RF, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - Zener - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation MBR1090HC0G electronic components. MBR1090HC0G can be shipped within 24 hours after order. If you have any demands for MBR1090HC0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MBR1090HC0G Mga katangian ng produkto
Bilang ng Bahagi :
MBR1090HC0G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 90V 10A TO220AC
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
90V
Kasalukuyang - Average na Rectified (Io) :
10A
Boltahe - Ipasa (Vf) (Max) @ Kung :
850mV @ 10A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
100µA @ 90V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-2
Package ng Tagabigay ng Device :
TO-220AC
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
1SS190TE85LF
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC59-3. Diodes - General Purpose, Power, Switching 0.1A 80V Switching Diode S-Mini High
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