RN2607(TE85L,F) Pagpepresyo (USD) [1060332pcs Stock]
- 1 pcs$0.03488
- Bilang ng Bahagi:
- RN2607(TE85L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS 2PNP PREBIAS 0.3W SM6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single, Diode - RF, Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Rectifiers - Arrays and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage RN2607(TE85L,F) electronic components. RN2607(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2607(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2607(TE85L,F) Mga katangian ng produkto
Bilang ng Bahagi :
RN2607(TE85L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS 2PNP PREBIAS 0.3W SM6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 PNP - Pre-Biased (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
10 kOhms
Resistor - Emitter Base (R2) :
47 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
Dalas - Paglilipat :
200MHz
Kapangyarihan - Max :
300mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SC-74, SOT-457
Package ng Tagabigay ng Device :
SM6
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