NGTD13R120F2WP Pagpepresyo (USD) [94150pcs Stock]
- 1 pcs$0.41530
- 682 pcs$0.34717
- Bilang ng Bahagi:
- NGTD13R120F2WP
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- DIODE GEN PURP 1.2KV DIE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay, Thyristors - Mga SCR and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NGTD13R120F2WP electronic components. NGTD13R120F2WP can be shipped within 24 hours after order. If you have any demands for NGTD13R120F2WP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NGTD13R120F2WP Mga katangian ng produkto
Bilang ng Bahagi :
NGTD13R120F2WP
Tagagawa :
ON Semiconductor
Paglalarawan :
DIODE GEN PURP 1.2KV DIE
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1200V
Kasalukuyang - Average na Rectified (Io) :
-
Boltahe - Ipasa (Vf) (Max) @ Kung :
2.6V @ 25A
Bilis :
-
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
1µA @ 1200V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Die
Operating temperatura - Junction :
175°C (Max)
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
VS-HFA04SD60S-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 4A TO252AA. Diodes - General Purpose, Power, Switching 4A 600V Ultrafast 17ns HEXFRED
-
VS-E4PH6006L-N3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 60A TO247AD. Rectifiers 600V 60A FRED Pt TO-247 LL 2L
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