SIZ920DT-T1-GE3 Pagpepresyo (USD) [4014pcs Stock]
- 3,000 pcs$0.33301
- Bilang ng Bahagi:
- SIZ920DT-T1-GE3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 40A PWRPAIR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIZ920DT-T1-GE3 electronic components. SIZ920DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ920DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ920DT-T1-GE3 Mga katangian ng produkto
Bilang ng Bahagi :
SIZ920DT-T1-GE3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET 2N-CH 30V 40A PWRPAIR
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
40A
Rds On (Max) @ Id, Vgs :
7.1 mOhm @ 18.9A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1260pF @ 15V
Kapangyarihan - Max :
39W, 100W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerWDFN
Package ng Tagabigay ng Device :
8-PowerPair® (6x5)
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