Vishay Semiconductor Diodes Division - VS-GA200TH60S

KEY Part #: K6533232

VS-GA200TH60S Pagpepresyo (USD) [225pcs Stock]

  • 1 pcs$205.24209
  • 12 pcs$168.35316

Bilang ng Bahagi:
VS-GA200TH60S
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
IGBT 600V 260A 1042W INT-A-PAK.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single and Thyristors - SCR - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-GA200TH60S electronic components. VS-GA200TH60S can be shipped within 24 hours after order. If you have any demands for VS-GA200TH60S, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-GA200TH60S Mga katangian ng produkto

Bilang ng Bahagi : VS-GA200TH60S
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : IGBT 600V 260A 1042W INT-A-PAK
Serye : -
Katayuan ng Bahagi : Active
Uri ng IGBT : -
Pag-configure : Half Bridge
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 600V
Kasalukuyang - Kolektor (Ic) (Max) : 260A
Kapangyarihan - Max : 1042W
Vce (on) (Max) @ Vge, Ic : 1.9V @ 15V, 200A (Typ)
Kasalukuyang - Collector Cutoff (Max) : 5µA
Input Capacitance (Cies) @ Vce : 13.1nF @ 25V
Input : Standard
NTC Thermistor : No
Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Double INT-A-PAK (3 + 4)
Package ng Tagabigay ng Device : Double INT-A-PAK

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