TSM60NB900CH C5G Pagpepresyo (USD) [85799pcs Stock]
- 1 pcs$0.45573
- Bilang ng Bahagi:
- TSM60NB900CH C5G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 600V 4A TO251.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Programmable Unijunction, Thyristors - Mga SCR, Diode - Rectifiers - Arrays, Mga Transistor - Bipolar (BJT) - RF and Transistor - Mga FET, MOSFET - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM60NB900CH C5G electronic components. TSM60NB900CH C5G can be shipped within 24 hours after order. If you have any demands for TSM60NB900CH C5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM60NB900CH C5G Mga katangian ng produkto
Bilang ng Bahagi :
TSM60NB900CH C5G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET N-CHANNEL 600V 4A TO251
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
900 mOhm @ 1.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
9.6nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
315pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
36.8W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-251 (IPAK)
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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