Infineon Technologies - IPI65R280E6XKSA1

KEY Part #: K6418248

IPI65R280E6XKSA1 Pagpepresyo (USD) [56694pcs Stock]

  • 1 pcs$0.68967
  • 500 pcs$0.63269

Bilang ng Bahagi:
IPI65R280E6XKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 650V 13.8A TO262.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
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Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPI65R280E6XKSA1 electronic components. IPI65R280E6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPI65R280E6XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI65R280E6XKSA1 Mga katangian ng produkto

Bilang ng Bahagi : IPI65R280E6XKSA1
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 650V 13.8A TO262
Serye : CoolMOS™ E6
Katayuan ng Bahagi : Not For New Designs
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 13.8A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 280 mOhm @ 4.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs : 45nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 950pF @ 100V
Tampok ng FET : -
Power Dissipation (Max) : 104W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : PG-TO262-3-1
Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA

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