Vishay Semiconductor Diodes Division - 10ETF12S

KEY Part #: K6447415

[1432pcs Stock]


    Bilang ng Bahagi:
    10ETF12S
    Tagagawa:
    Vishay Semiconductor Diodes Division
    Detalyadong Paglalarawan:
    DIODE GEN PURP 1.2KV 10A D2PAK.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Mga Transistor - JFET, Thyristors - Mga SCR and Diode - Mga Rectifier ng Bridge ...
    Kumpetensyang Pakinabang:
    We specialize in Vishay Semiconductor Diodes Division 10ETF12S electronic components. 10ETF12S can be shipped within 24 hours after order. If you have any demands for 10ETF12S, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    10ETF12S Mga katangian ng produkto

    Bilang ng Bahagi : 10ETF12S
    Tagagawa : Vishay Semiconductor Diodes Division
    Paglalarawan : DIODE GEN PURP 1.2KV 10A D2PAK
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 1200V
    Kasalukuyang - Average na Rectified (Io) : 10A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.33V @ 10A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 310ns
    Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 1200V
    Capacitance @ Vr, F : -
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Package ng Tagabigay ng Device : TO-263AB (D²PAK)
    Operating temperatura - Junction : -40°C ~ 150°C

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