[12770pcs Stock]
- Bilang ng Bahagi:
- IRF9Z24NSTRR
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET P-CH 55V 12A D2PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Diode - RF and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF9Z24NSTRR electronic components. IRF9Z24NSTRR can be shipped within 24 hours after order. If you have any demands for IRF9Z24NSTRR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF9Z24NSTRR Mga katangian ng produkto
Bilang ng Bahagi :
IRF9Z24NSTRR
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET P-CH 55V 12A D2PAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
12A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
175 mOhm @ 7.2A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
3.8W (Ta), 45W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
D2PAK
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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