Microsemi Corporation - JANTXV1N5415US

KEY Part #: K6444319

[7348pcs Stock]


    Bilang ng Bahagi:
    JANTXV1N5415US
    Tagagawa:
    Microsemi Corporation
    Detalyadong Paglalarawan:
    DIODE GEN PURP 50V 3A D5B.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Mga FET, MOSFET - Single, Transistor - Mga FET, MOSFET - Arrays and Transistor - IGBTs - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Microsemi Corporation JANTXV1N5415US electronic components. JANTXV1N5415US can be shipped within 24 hours after order. If you have any demands for JANTXV1N5415US, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    JANTXV1N5415US Mga katangian ng produkto

    Bilang ng Bahagi : JANTXV1N5415US
    Tagagawa : Microsemi Corporation
    Paglalarawan : DIODE GEN PURP 50V 3A D5B
    Serye : Military, MIL-PRF-19500/411
    Katayuan ng Bahagi : Discontinued at Digi-Key
    Uri ng Diode : Standard
    Boltahe - DC Reverse (Vr) (Max) : 50V
    Kasalukuyang - Average na Rectified (Io) : 3A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 1.5V @ 9A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 150ns
    Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 50V
    Capacitance @ Vr, F : -
    Uri ng Pag-mount : Surface Mount
    Pakete / Kaso : SQ-MELF, B
    Package ng Tagabigay ng Device : D-5B
    Operating temperatura - Junction : -65°C ~ 175°C

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