TK6Q60W,S1VQ Pagpepresyo (USD) [63944pcs Stock]
- 1 pcs$0.67600
- 75 pcs$0.67264
- Bilang ng Bahagi:
- TK6Q60W,S1VQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 6.2A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK6Q60W,S1VQ electronic components. TK6Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK6Q60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK6Q60W,S1VQ Mga katangian ng produkto
Bilang ng Bahagi :
TK6Q60W,S1VQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 6.2A IPAK
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.2A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
820 mOhm @ 3.1A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
390pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
60W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Stub Leads, IPak
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