Toshiba Semiconductor and Storage - RN1111MFV,L3F

KEY Part #: K6526319

RN1111MFV,L3F Pagpepresyo (USD) [3227101pcs Stock]

  • 1 pcs$0.01146

Bilang ng Bahagi:
RN1111MFV,L3F
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
X34 PB-F VESM PLN LF TRANSISTO.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Diode - Rectifiers - Arrays, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Transistor - IGBTs - Mga Module and Thyristors - Mga TRIAC ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage RN1111MFV,L3F electronic components. RN1111MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1111MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1111MFV,L3F Mga katangian ng produkto

Bilang ng Bahagi : RN1111MFV,L3F
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : X34 PB-F VESM PLN LF TRANSISTO
Serye : -
Katayuan ng Bahagi : Active
Uri ng Transistor : NPN - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) : 100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 50V
Resistor - Base (R1) : 10 kOhms
Resistor - Emitter Base (R2) : -
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Kasalukuyang - Collector Cutoff (Max) : 100nA (ICBO)
Dalas - Paglilipat : -
Kapangyarihan - Max : 150mW
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOT-723
Package ng Tagabigay ng Device : VESM

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