Toshiba Semiconductor and Storage - CMH07(TE12L,Q,M)

KEY Part #: K6431855

CMH07(TE12L,Q,M) Pagpepresyo (USD) [494560pcs Stock]

  • 1 pcs$0.07479

Bilang ng Bahagi:
CMH07(TE12L,Q,M)
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 2A M-FLAT. Rectifiers Switching Diode HED 2A 200V 35ns
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Mga Transistor - JFET and Thyristors - DIACs, SIDACs ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage CMH07(TE12L,Q,M) electronic components. CMH07(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for CMH07(TE12L,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CMH07(TE12L,Q,M) Mga katangian ng produkto

Bilang ng Bahagi : CMH07(TE12L,Q,M)
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : DIODE GEN PURP 200V 2A M-FLAT
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 2A
Boltahe - Ipasa (Vf) (Max) @ Kung : 980mV @ 2A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 100ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOD-128
Package ng Tagabigay ng Device : M-FLAT (2.4x3.8)
Operating temperatura - Junction : -40°C ~ 150°C

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