Toshiba Semiconductor and Storage - 1SS387CT,L3F

KEY Part #: K6428275

1SS387CT,L3F Pagpepresyo (USD) [3056256pcs Stock]

  • 1 pcs$0.01277
  • 10,000 pcs$0.01271
  • 30,000 pcs$0.01196
  • 50,000 pcs$0.01121
  • 100,000 pcs$0.00997

Bilang ng Bahagi:
1SS387CT,L3F
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
DIODE GEN PURP 80V 100MA CST2. Diodes - General Purpose, Power, Switching Switching Diode 80V 100MA CST2
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Diode - RF, Transistor - IGBTs - Arrays, Mga module ng Power driver, Transistor - IGBTs - Mga Module, Thyristors - Mga TRIAC and Transistors - IGBTs - Single ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage 1SS387CT,L3F electronic components. 1SS387CT,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387CT,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387CT,L3F Mga katangian ng produkto

Bilang ng Bahagi : 1SS387CT,L3F
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : DIODE GEN PURP 80V 100MA CST2
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 80V
Kasalukuyang - Average na Rectified (Io) : 100mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 100mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 1.6ns
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 80V
Capacitance @ Vr, F : 0.5pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SOD-882
Package ng Tagabigay ng Device : CST2
Operating temperatura - Junction : 150°C (Max)

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