RGT8NS65DGTL Pagpepresyo (USD) [166793pcs Stock]
- 1 pcs$0.22287
- 1,000 pcs$0.22176
- 2,000 pcs$0.20697
- 5,000 pcs$0.19712
- Bilang ng Bahagi:
- RGT8NS65DGTL
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- IGBT 650V 8A 65W TO-263S.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Arrays, Diode - Rectifiers - Single, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor RGT8NS65DGTL electronic components. RGT8NS65DGTL can be shipped within 24 hours after order. If you have any demands for RGT8NS65DGTL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RGT8NS65DGTL Mga katangian ng produkto
Bilang ng Bahagi :
RGT8NS65DGTL
Tagagawa :
Rohm Semiconductor
Paglalarawan :
IGBT 650V 8A 65W TO-263S
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng IGBT :
Trench Field Stop
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
650V
Kasalukuyang - Kolektor (Ic) (Max) :
8A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
12A
Vce (on) (Max) @ Vge, Ic :
2.1V @ 15V, 4A
Kapangyarihan - Max :
65W
Paglipat ng Enerhiya :
-
Uri ng input :
Standard
Gate Charge :
13.5nC
Td (on / off) @ 25 ° C :
17ns/69ns
Kondisyon ng Pagsubok :
400V, 4A, 50 Ohm, 15V
Reverse Recovery Time (trr) :
40ns
Temperatura ng pagpapatakbo :
-40°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device :
LPDS (TO-263S)
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