DDTB114GC-7-F Pagpepresyo (USD) [1903162pcs Stock]
- 1 pcs$0.01943
- 3,000 pcs$0.01801
- Bilang ng Bahagi:
- DDTB114GC-7-F
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- TRANS PREBIAS PNP 200MW SOT23-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Espesyal na Pakay and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DDTB114GC-7-F electronic components. DDTB114GC-7-F can be shipped within 24 hours after order. If you have any demands for DDTB114GC-7-F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DDTB114GC-7-F Mga katangian ng produkto
Bilang ng Bahagi :
DDTB114GC-7-F
Tagagawa :
Diodes Incorporated
Paglalarawan :
TRANS PREBIAS PNP 200MW SOT23-3
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
PNP - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
500mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
-
Resistor - Emitter Base (R2) :
10 kOhms
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
56 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 2.5mA, 50mA
Kasalukuyang - Collector Cutoff (Max) :
500nA (ICBO)
Dalas - Paglilipat :
200MHz
Kapangyarihan - Max :
200mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
SOT-23-3
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