Taiwan Semiconductor Corporation - HER306G A0G

KEY Part #: K6429433

HER306G A0G Pagpepresyo (USD) [523752pcs Stock]

  • 1 pcs$0.07062

Bilang ng Bahagi:
HER306G A0G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 600V 3A DO201AD. Rectifiers 75ns 3A 600V Hi Eff Recov Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - Espesyal na Pakay, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - RF, Diode - Zener - Single, Transistor - Bipolar (BJT) - Arrays and Diode - Mga Rectifier ng Bridge ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation HER306G A0G electronic components. HER306G A0G can be shipped within 24 hours after order. If you have any demands for HER306G A0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HER306G A0G Mga katangian ng produkto

Bilang ng Bahagi : HER306G A0G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 600V 3A DO201AD
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 600V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 600V
Capacitance @ Vr, F : 35pF @ 4V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : DO-201AD, Axial
Package ng Tagabigay ng Device : DO-201AD
Operating temperatura - Junction : -55°C ~ 150°C

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