Diodes Incorporated - DMN1029UFDB-13

KEY Part #: K6522434

DMN1029UFDB-13 Pagpepresyo (USD) [694654pcs Stock]

  • 1 pcs$0.05325
  • 10,000 pcs$0.04731

Bilang ng Bahagi:
DMN1029UFDB-13
Tagagawa:
Diodes Incorporated
Detalyadong Paglalarawan:
MOSFET 2N-CH 12V 5.6A 6UDFN.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Diode - Zener - Single and Transistor - Mga FET, MOSFET - Single ...
Kumpetensyang Pakinabang:
We specialize in Diodes Incorporated DMN1029UFDB-13 electronic components. DMN1029UFDB-13 can be shipped within 24 hours after order. If you have any demands for DMN1029UFDB-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN1029UFDB-13 Mga katangian ng produkto

Bilang ng Bahagi : DMN1029UFDB-13
Tagagawa : Diodes Incorporated
Paglalarawan : MOSFET 2N-CH 12V 5.6A 6UDFN
Serye : -
Katayuan ng Bahagi : Active
Uri ng FET : 2 N-Channel (Dual)
Tampok ng FET : Standard
Drain sa Source Voltage (Vdss) : 12V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 5.6A
Rds On (Max) @ Id, Vgs : 29 mOhm @ 5A, 4.5V
Vgs (th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 19.6nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds : 914pF @ 6V
Kapangyarihan - Max : 1.4W
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 6-UDFN Exposed Pad
Package ng Tagabigay ng Device : U-DFN2020-6 (Type B)

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