GeneSiC Semiconductor - MBR60030CTRL

KEY Part #: K6474829

[6307pcs Stock]


    Bilang ng Bahagi:
    MBR60030CTRL
    Tagagawa:
    GeneSiC Semiconductor
    Detalyadong Paglalarawan:
    DIODE SCHOTTKY 30V 300A 2 TOWER.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single and Mga Transistor - FET, MOSFET - RF ...
    Kumpetensyang Pakinabang:
    We specialize in GeneSiC Semiconductor MBR60030CTRL electronic components. MBR60030CTRL can be shipped within 24 hours after order. If you have any demands for MBR60030CTRL, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    MBR60030CTRL Mga katangian ng produkto

    Bilang ng Bahagi : MBR60030CTRL
    Tagagawa : GeneSiC Semiconductor
    Paglalarawan : DIODE SCHOTTKY 30V 300A 2 TOWER
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Pag-configure ng Diode : 1 Pair Common Anode
    Uri ng Diode : Schottky
    Boltahe - DC Reverse (Vr) (Max) : 30V
    Kasalukuyang - Average Rectified (Io) (bawat Diode) : 300A
    Boltahe - Ipasa (Vf) (Max) @ Kung : 580mV @ 300A
    Bilis : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : -
    Kasalukuyang - Reverse Leakage @ Vr : 3mA @ 30V
    Operating temperatura - Junction : -55°C ~ 150°C
    Uri ng Pag-mount : Chassis Mount
    Pakete / Kaso : Twin Tower
    Package ng Tagabigay ng Device : Twin Tower