SF2008GHC0G Pagpepresyo (USD) [222668pcs Stock]
- 1 pcs$0.16611
- Bilang ng Bahagi:
- SF2008GHC0G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 20A TO220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistors - IGBTs - Single, Mga Transistor - FET, MOSFET - RF, Thyristors - Mga TRIAC, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation SF2008GHC0G electronic components. SF2008GHC0G can be shipped within 24 hours after order. If you have any demands for SF2008GHC0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SF2008GHC0G Mga katangian ng produkto
Bilang ng Bahagi :
SF2008GHC0G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE GEN PURP 600V 20A TO220AB
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
20A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.7V @ 10A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
35ns
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 600V
Capacitance @ Vr, F :
80pF @ 4V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-3
Package ng Tagabigay ng Device :
TO-220AB
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
-
-
1SS190TE85LF
Toshiba Semiconductor and Storage
DIODE GEN PURP 80V 100MA SC59-3. Diodes - General Purpose, Power, Switching 0.1A 80V Switching Diode S-Mini High
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