[8791pcs Stock]
- Bilang ng Bahagi:
- H7N1002LS-E
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V LDPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Diode - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America H7N1002LS-E electronic components. H7N1002LS-E can be shipped within 24 hours after order. If you have any demands for H7N1002LS-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
H7N1002LS-E Mga katangian ng produkto
Bilang ng Bahagi :
H7N1002LS-E
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET N-CH 100V LDPAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
75A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 37.5A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
155nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
9700pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
100W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
4-LDPAK
Pakete / Kaso :
SC-83
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