HN1C01FE-GR,LF Pagpepresyo (USD) [1436579pcs Stock]
- 1 pcs$0.02588
- 4,000 pcs$0.02575
- 8,000 pcs$0.02317
- 12,000 pcs$0.02060
- 28,000 pcs$0.01931
- 100,000 pcs$0.01716
- Bilang ng Bahagi:
- HN1C01FE-GR,LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS 2NPN 50V 0.15A ES6.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Arrays, Mga Transistor - JFET, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Thyristors - SCR - Mga Module and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN1C01FE-GR,LF electronic components. HN1C01FE-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1C01FE-GR,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN1C01FE-GR,LF Mga katangian ng produkto
Bilang ng Bahagi :
HN1C01FE-GR,LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS 2NPN 50V 0.15A ES6
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 NPN (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
150mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Kapangyarihan - Max :
100mW
Dalas - Paglilipat :
80MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-563, SOT-666
Package ng Tagabigay ng Device :
ES6
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