Vishay Semiconductor Diodes Division - VI20120SGHM3/4W

KEY Part #: K6443176

VI20120SGHM3/4W Pagpepresyo (USD) [2881pcs Stock]

  • 1,000 pcs$0.23328

Bilang ng Bahagi:
VI20120SGHM3/4W
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE SCHOTTKY 20A 120V TO-262AA.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistors - IGBTs - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - FET, MOSFET - RF, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VI20120SGHM3/4W electronic components. VI20120SGHM3/4W can be shipped within 24 hours after order. If you have any demands for VI20120SGHM3/4W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VI20120SGHM3/4W Mga katangian ng produkto

Bilang ng Bahagi : VI20120SGHM3/4W
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE SCHOTTKY 20A 120V TO-262AA
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Obsolete
Uri ng Diode : Schottky
Boltahe - DC Reverse (Vr) (Max) : 120V
Kasalukuyang - Average na Rectified (Io) : 20A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.33V @ 20A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 250µA @ 120V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-262-3 Long Leads, I²Pak, TO-262AA
Package ng Tagabigay ng Device : TO-262AA
Operating temperatura - Junction : -40°C ~ 150°C

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