Vishay Semiconductor Diodes Division - US1MHE3_A/I

KEY Part #: K6433362

US1MHE3_A/I Pagpepresyo (USD) [725702pcs Stock]

  • 1 pcs$0.05097
  • 7,500 pcs$0.04660

Bilang ng Bahagi:
US1MHE3_A/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 1KV 1A DO214AC. Rectifiers 1000 Volt 1.0A 75ns 30 Amp IFSM
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - Mga TRIAC, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division US1MHE3_A/I electronic components. US1MHE3_A/I can be shipped within 24 hours after order. If you have any demands for US1MHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1MHE3_A/I Mga katangian ng produkto

Bilang ng Bahagi : US1MHE3_A/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 1KV 1A DO214AC
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1000V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

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