Vishay Semiconductor Diodes Division - VS-8EWS10STRR-M3

KEY Part #: K6434346

VS-8EWS10STRR-M3 Pagpepresyo (USD) [191249pcs Stock]

  • 1 pcs$0.19340
  • 3,000 pcs$0.17442

Bilang ng Bahagi:
VS-8EWS10STRR-M3
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 1KV 8A DPAK. Rectifiers Input Diodes - D-PAK
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Transistor - Programmable Unijunction, Transistor - IGBTs - Arrays, Thyristors - Mga TRIAC, Transistor - IGBTs - Mga Module, Mga module ng Power driver and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-8EWS10STRR-M3 electronic components. VS-8EWS10STRR-M3 can be shipped within 24 hours after order. If you have any demands for VS-8EWS10STRR-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-8EWS10STRR-M3 Mga katangian ng produkto

Bilang ng Bahagi : VS-8EWS10STRR-M3
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 1KV 8A DPAK
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1000V
Kasalukuyang - Average na Rectified (Io) : 8A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.1V @ 8A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 50µA @ 1000V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device : D-PAK (TO-252AA)
Operating temperatura - Junction : -55°C ~ 150°C

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