NVMFD5875NLWFT3G Pagpepresyo (USD) [4086pcs Stock]
- 5,000 pcs$0.17358
- Bilang ng Bahagi:
- NVMFD5875NLWFT3G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 60V 7A SO8FL.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Thyristors - Mga TRIAC and Transistor - IGBTs - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NVMFD5875NLWFT3G electronic components. NVMFD5875NLWFT3G can be shipped within 24 hours after order. If you have any demands for NVMFD5875NLWFT3G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NVMFD5875NLWFT3G Mga katangian ng produkto
Bilang ng Bahagi :
NVMFD5875NLWFT3G
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET 2N-CH 60V 7A SO8FL
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
7A
Rds On (Max) @ Id, Vgs :
33 mOhm @ 7.5A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
540pF @ 25V
Kapangyarihan - Max :
3.2W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerTDFN
Package ng Tagabigay ng Device :
8-DFN (5x6) Dual Flag (SO8FL-Dual)
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