Bilang ng Bahagi :
IPD50R650CEATMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N CH 500V 6.1A PG-TO252
Katayuan ng Bahagi :
Obsolete
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6.1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 1.8A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
342pF @ 100V
Power Dissipation (Max) :
69W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
PG-TO252-3
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63