RN2412TE85LF Pagpepresyo (USD) [1760237pcs Stock]
- 1 pcs$0.02112
- 3,000 pcs$0.02101
- 6,000 pcs$0.01827
- 15,000 pcs$0.01553
- 30,000 pcs$0.01462
- 75,000 pcs$0.01370
- 150,000 pcs$0.01218
- Bilang ng Bahagi:
- RN2412TE85LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS PREBIAS PNP 0.2W SMINI.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Single, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Single, Mga Transistor - JFET and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage RN2412TE85LF electronic components. RN2412TE85LF can be shipped within 24 hours after order. If you have any demands for RN2412TE85LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RN2412TE85LF Mga katangian ng produkto
Bilang ng Bahagi :
RN2412TE85LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PREBIAS PNP 0.2W SMINI
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
PNP - Pre-Biased
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
22 kOhms
Resistor - Emitter Base (R2) :
-
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 250µA, 5mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
Dalas - Paglilipat :
200MHz
Kapangyarihan - Max :
200mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
Package ng Tagabigay ng Device :
S-Mini
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