RFD3055LE Pagpepresyo (USD) [105080pcs Stock]
- 1 pcs$0.40556
- 10 pcs$0.33459
- 100 pcs$0.25806
- 500 pcs$0.19116
- 1,000 pcs$0.15293
- Bilang ng Bahagi:
- RFD3055LE
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 11A I-PAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Zener - Arrays, Mga module ng Power driver, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Mga Rectifier ng Bridge and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor RFD3055LE electronic components. RFD3055LE can be shipped within 24 hours after order. If you have any demands for RFD3055LE, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RFD3055LE Mga katangian ng produkto
Bilang ng Bahagi :
RFD3055LE
Tagagawa :
ON Semiconductor
Paglalarawan :
MOSFET N-CH 60V 11A I-PAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
5V
Rds On (Max) @ Id, Vgs :
107 mOhm @ 8A, 5V
Vgs (th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
11.3nC @ 10V
Vgs (Max) :
±16V
Input Capacitance (Ciss) (Max) @ Vds :
350pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
38W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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