[565pcs Stock]
- Bilang ng Bahagi:
- SI5499DC-T1-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET P-CH 8V 6A 1206-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Diode - RF, Transistors - IGBTs - Single, Thyristors - SCR - Mga Module, Transistor - Programmable Unijunction and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI5499DC-T1-E3 electronic components. SI5499DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5499DC-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI5499DC-T1-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SI5499DC-T1-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET P-CH 8V 6A 1206-8
Serye :
TrenchFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
8V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
6A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
36 mOhm @ 5.1A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
35nC @ 8V
Vgs (Max) :
±5V
Input Capacitance (Ciss) (Max) @ Vds :
1290pF @ 4V
Tampok ng FET :
-
Power Dissipation (Max) :
2.5W (Ta), 6.2W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
1206-8 ChipFET™
Pakete / Kaso :
8-SMD, Flat Lead
Pinakabagong Balita
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