IRF8313TRPBF Pagpepresyo (USD) [330336pcs Stock]
- 1 pcs$0.11197
- 4,000 pcs$0.10730
- Bilang ng Bahagi:
- IRF8313TRPBF
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 30V 9.7A 8-SOIC.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Mga Transistor - FET, MOSFET - RF, Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Zener - Single and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF8313TRPBF electronic components. IRF8313TRPBF can be shipped within 24 hours after order. If you have any demands for IRF8313TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF8313TRPBF Mga katangian ng produkto
Bilang ng Bahagi :
IRF8313TRPBF
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET 2N-CH 30V 9.7A 8-SOIC
Serye :
HEXFET®
Katayuan ng Bahagi :
Not For New Designs
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
9.7A
Rds On (Max) @ Id, Vgs :
15.5 mOhm @ 9.7A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
760pF @ 15V
Kapangyarihan - Max :
2W
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-SOIC (0.154", 3.90mm Width)
Package ng Tagabigay ng Device :
8-SO
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