Samsung Semiconductor - K4B2G0846F-BYNB

KEY Part #: K7359656

[20824pcs Stock]


    Bilang ng Bahagi:
    K4B2G0846F-BYNB
    Tagagawa:
    Samsung Semiconductor
    Detalyadong Paglalarawan:
    2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: LPDDR3, GDDR5, LPDDR4X, HBM Flarebolt, MODULE, GDDR6, SLC Nand and DDR3 ...
    Kumpetensyang Pakinabang:
    We specialize in Samsung Semiconductor K4B2G0846F-BYNB electronic components. K4B2G0846F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BYNB Mga katangian ng produkto

    Bilang ng Bahagi : K4B2G0846F-BYNB
    Tagagawa : Samsung Semiconductor
    Paglalarawan : 2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serye : DDR3
    densidad : 2 Gb
    Org. : 256M x 8
    bilis : 2133 Mbps
    Boltahe : 1.35 V
    Temp. : 0 ~ 85 °C
    pakete : 78FBGA
    Katayuan ng produkto : Mass Production

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