IGD01N120H2BUMA1 Pagpepresyo (USD) [151151pcs Stock]
- 1 pcs$0.24470
- 2,500 pcs$0.21075
- Bilang ng Bahagi:
- IGD01N120H2BUMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- IGBT 1200V 3.2A 28W TO252-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Mga Transistor - Bipolar (BJT) - RF, Diode - RF, Mga Transistor - JFET and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IGD01N120H2BUMA1 electronic components. IGD01N120H2BUMA1 can be shipped within 24 hours after order. If you have any demands for IGD01N120H2BUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IGD01N120H2BUMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IGD01N120H2BUMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
IGBT 1200V 3.2A 28W TO252-3
Serye :
-
Katayuan ng Bahagi :
Not For New Designs
Uri ng IGBT :
-
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
1200V
Kasalukuyang - Kolektor (Ic) (Max) :
3.2A
Kasalukuyang - Kolektor ng Pulsed (Icm) :
3.5A
Vce (on) (Max) @ Vge, Ic :
2.8V @ 15V, 1A
Kapangyarihan - Max :
28W
Paglipat ng Enerhiya :
140µJ
Uri ng input :
Standard
Gate Charge :
8.6nC
Td (on / off) @ 25 ° C :
13ns/370ns
Kondisyon ng Pagsubok :
800V, 1A, 241 Ohm, 15V
Reverse Recovery Time (trr) :
-
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
TO-252-3, DPak (2 Leads + Tab), SC-63
Package ng Tagabigay ng Device :
PG-TO252-3
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