TPW1R306PL,L1Q Pagpepresyo (USD) [66799pcs Stock]
- 1 pcs$0.59163
- 5,000 pcs$0.58868
- Bilang ng Bahagi:
- TPW1R306PL,L1Q
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- X35 PB-F POWER MOSFET TRANSISTOR.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Mga FET, MOSFET - Single, Transistors - IGBTs - Single, Diode - Rectifiers - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TPW1R306PL,L1Q electronic components. TPW1R306PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPW1R306PL,L1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPW1R306PL,L1Q Mga katangian ng produkto
Bilang ng Bahagi :
TPW1R306PL,L1Q
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
X35 PB-F POWER MOSFET TRANSISTOR
Serye :
U-MOSIX-H
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
260A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.29 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
91nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
960mW (Ta), 170W (Tc)
Temperatura ng pagpapatakbo :
175°C
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-DSOP Advance
Pakete / Kaso :
8-PowerVDFN
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