Toshiba Semiconductor and Storage - 1SS387,L3F

KEY Part #: K6456629

1SS387,L3F Pagpepresyo (USD) [2750629pcs Stock]

  • 1 pcs$0.01419
  • 8,000 pcs$0.01412
  • 16,000 pcs$0.01200
  • 24,000 pcs$0.01130
  • 56,000 pcs$0.01059
  • 200,000 pcs$0.00941

Bilang ng Bahagi:
1SS387,L3F
Tagagawa:
Toshiba Semiconductor and Storage
Detalyadong Paglalarawan:
DIODE GEN PURP 80V 100MA ESC. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Single, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga module ng Power driver, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Mga Module and Thyristors - Mga SCR ...
Kumpetensyang Pakinabang:
We specialize in Toshiba Semiconductor and Storage 1SS387,L3F electronic components. 1SS387,L3F can be shipped within 24 hours after order. If you have any demands for 1SS387,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS387,L3F Mga katangian ng produkto

Bilang ng Bahagi : 1SS387,L3F
Tagagawa : Toshiba Semiconductor and Storage
Paglalarawan : DIODE GEN PURP 80V 100MA ESC
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 80V
Kasalukuyang - Average na Rectified (Io) : 100mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.2V @ 100mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Kasalukuyang - Reverse Leakage @ Vr : 500nA @ 80V
Capacitance @ Vr, F : 3pF @ 0V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SC-79, SOD-523
Package ng Tagabigay ng Device : ESC
Operating temperatura - Junction : 125°C (Max)

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