[1535pcs Stock]
- Bilang ng Bahagi:
- SIDC24D30SIC3
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- DIODE SILICON 300V 10A WAFER.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Thyristors - DIACs, SIDACs, Mga module ng Power driver, Mga Transistor - JFET and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies SIDC24D30SIC3 electronic components. SIDC24D30SIC3 can be shipped within 24 hours after order. If you have any demands for SIDC24D30SIC3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDC24D30SIC3 Mga katangian ng produkto
Bilang ng Bahagi :
SIDC24D30SIC3
Tagagawa :
Infineon Technologies
Paglalarawan :
DIODE SILICON 300V 10A WAFER
Serye :
-
Katayuan ng Bahagi :
Discontinued at Digi-Key
Uri ng Diode :
Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) :
300V
Kasalukuyang - Average na Rectified (Io) :
10A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.7V @ 10A
Bilis :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Kasalukuyang - Reverse Leakage @ Vr :
200µA @ 300V
Capacitance @ Vr, F :
600pF @ 1V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
Die
Package ng Tagabigay ng Device :
Sawn on foil
Operating temperatura - Junction :
-55°C ~ 175°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
-
-
VS-8EWX06FN-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 8A TO252. Rectifiers 8A 600V 15ns Hyperfast
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