S1GHE3_A/H Pagpepresyo (USD) [977949pcs Stock]
- 1 pcs$0.03782
- 7,200 pcs$0.02825
- Bilang ng Bahagi:
- S1GHE3_A/H
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 400V 1A DO214AC. Rectifiers 1.0 Amp 400 Volt 40A IFSM @ 8.3ms
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - RF, Transistor - Bipolar (BJT) - Arrays and Transistor - Mga FET, MOSFET - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division S1GHE3_A/H electronic components. S1GHE3_A/H can be shipped within 24 hours after order. If you have any demands for S1GHE3_A/H, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
S1GHE3_A/H Mga katangian ng produkto
Bilang ng Bahagi :
S1GHE3_A/H
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 400V 1A DO214AC
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
400V
Kasalukuyang - Average na Rectified (Io) :
1A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.1V @ 1A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
1.8µs
Kasalukuyang - Reverse Leakage @ Vr :
1µA @ 400V
Capacitance @ Vr, F :
12pF @ 4V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-214AC, SMA
Package ng Tagabigay ng Device :
DO-214AC (SMA)
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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