Vishay Semiconductor Diodes Division - US1GHE3_A/H

KEY Part #: K6455566

US1GHE3_A/H Pagpepresyo (USD) [636328pcs Stock]

  • 1 pcs$0.05813
  • 1,800 pcs$0.05412
  • 3,600 pcs$0.04961
  • 5,400 pcs$0.04660
  • 12,600 pcs$0.04360
  • 45,000 pcs$0.04009

Bilang ng Bahagi:
US1GHE3_A/H
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 400V 1A DO214AC. Rectifiers 400 Volt 1.0A 50ns 30 Amp IFSM
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Transistor - Bipolar (BJT) - Arrays, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Arrays, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - SCR - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division US1GHE3_A/H electronic components. US1GHE3_A/H can be shipped within 24 hours after order. If you have any demands for US1GHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1GHE3_A/H Mga katangian ng produkto

Bilang ng Bahagi : US1GHE3_A/H
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 400V 1A DO214AC
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 400V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 400V
Capacitance @ Vr, F : 15pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

Maaari ka ring Makisalamuha sa
  • C3D04060E

    Cree/Wolfspeed

    DIODE SCHOTTKY 600V 4A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 600V, 4A

  • CSD01060E-TR

    Cree/Wolfspeed

    DIODE SCHOTTKY 600V 1A TO252-2. Schottky Diodes & Rectifiers SiC Schottky Diode 1A, 600V

  • C4D10120E

    Cree/Wolfspeed

    DIODE SCHOTTKY 1.2KV 10A TO252-2. Schottky Diodes & Rectifiers SIC SCHOTTKY DIODE 1200V, 10A

  • BAT64E6327HTSA1

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3. Schottky Diodes & Rectifiers 40V 0.12A

  • MMBD1201

    ON Semiconductor

    DIODE GEN PURP 100V 200MA SOT23. Diodes - General Purpose, Power, Switching High Conductance Ultra Fast

  • MMBD914LT1HTSA1

    Infineon Technologies

    DIODE GEN PURP 100V 250MA SOT23. Diodes - General Purpose, Power, Switching AF DIODE 100V 0.25A